Photo transistor cross reference6/21/2023 ![]() ![]() ![]() QE is inversely proportional to the wavelength of incident photon. The main performance matrices parameters of any optical devices are: Quantum efficiency: It refers to the percentage of absorbed photons that produce electron-hole pair. Thus, like the case for a photodiode, doubling the size of the Base region doubles the amount of generated Base photocurrent, but phototransistor has much lower noise level as compared to photodiode, we will focus on the photo-bipolar junction transistor (photo-BJT) because of the large current gain of such devices as compare to other optical devices with same physical phenomenon. The collector-Base junction of the phototransistor works as a photodiode generating a photocurrent which is fed into the Base of the transistor. For a given light source illumination level, the output of a BJT based phototransistor is defined by the area of the exposed collector-Base junction and the DC current Gain of the transistor. These devices respond to light over a broad range of wavelength from the near UV, through the visible and into the near IR part of spectrum. A phototransistor is a semiconductor device that is highly sensitive to light striking it by generating an electric current. For applications with weak optical signals, the use of photo-detectors with built-in amplification are used, those photo-detectors are called phototransistor. Optical devices are used to convert optical energy (light) into electrical energy. Keywords- BJT, AlGaAs, GaAs, Hetero-junction Photo- transistor, Homo-junction Photo-transistor. In addition, a comparative study is done in between homo-junction and hetero-junction BJT based phototransistors which help in understanding the basic phenomena of different performance parameters, like optical gain, spectral range, and efficiency The choice of materials for fabrication of phototransistors has also been discussed and make a small comparison in solar-cell, photo-diode and phototransistor with the basic parameters used in optical devices. If it was Germanium (likely) you can go silicone you don't need 900 Mhz switching for sure.1Chandrika Sharma, 2Nidhi Sharma, 3Poornima Sharma, *Veerendra Kumarġ, 2, 3 M.Tech (VLSI Design), Banasthali University, IndiaĪbstract This literature survey prospects the performances of photo-transistors using different directions of illumination of the device and tends to find the optimized direction in-terms of conversion gain, optical gain and injection efficiency. if you had a schematic and could highlight the transistor I am sure some gurus could give you other options. I am guessing you can put a lot of transistors in there. General Purpose Silicon Rectifier not a match NPN Transistor High Voltage Power Output not likely for a RF circuit Germanium Mesa Transistor, PNP, for High–Speed Switching Applications The NTE160 is a germanium mesa PNP transistor in a TO72 metal caseĭesigned for use as a preamplifier mixer and oscillator up to 900MHz. Germanium PNP Transistor (sounds like a likely match) The NTE is another transistor, NPN low noise high gain PNP audio power amplifier, NTE289A is NPN version (circuit should tell you PNP or NPN) I am gussing it is a VFL2744 not VFO 2744? I plugged in 2744 and got something different. ![]() Anyone know what a vfo 2744 might cross reference to? it is in the pream section of a Solid state magnavox consoleįor a 2744 I get a NTE 290A would this be correct? ![]()
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